Low-Temperature Sinterable Cu@Ag Paste with Superior Strength Driven by Pre-Heating Process

To preserve the structural integrity of power semiconductor devices, ensuring a reliable connection between wide-bandgap (WBG) chips and their substrates at temperatures above 200 °C is crucial. Therefore, easily processable chip-attach materials with high bonding strengths should be developed. Herein, we determined optimal pre-heating conditions to achieve highly WBG devices. Sintering silver-coated copper (Cu@Ag) particle paste was investigated as model system for chip attachment in electric After printing onto direct-bonded ceramic substrate placing Si on paste, process conducted 50 70 different periods time. Finally, samples were sintered pressure 9 MPa 250 an N2 atmosphere 1 h. The quality obtained Cu@Ag joints significantly varied depending temperature When pre-heated °C, more reproducible achieved than °C. In particular, high-quality time 4 min. However, after excessive time, cracks voids generated impacting negatively performance joints.